BAS116,215 datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  BAS116,215
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BAS116,215 Capacitance @ Vr, F: 2pF @ 0V, 1MHz Configuration: Single Current - Average Rectified (io): 215mA (DC) Current - Reverse Leakage @ Vr: 5nA @ 75V Forward Continuous Current: 0.215 A Forward Voltage Drop: 1.25 V at 0.15 A ID_COMPONENTS: 3672630 Max Surge Current: 4 A Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Product: Standard Recovery Rectifier Recovery Time: 3000 ns Reverse Current Ir: 0.005 uA Reverse Recovery Time (trr): 3?µs Reverse Voltage: 85 V Series: - Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Dc Reverse (vr) (max): 75V Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA Other Names: 934032170215::BAS116 T/R::BAS116 T/R
• Количество страниц
  8 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  75,47 KB

BAS116,215 datasheet скачать

BAS116,215 datasheet